P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Author(s)
Wencan Li, Jiao Cui, Weiwei Wang, Dahuai Zheng, Longfei Jia, Shahzad Saeed, Hongde Liu, Romano Rupp, Yongfa Kong, Jingjun Xu
Abstract

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 x 10(15) cm(-3) with a field-effect mobility of 266 cm(2)V(-1)s(-1). X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

Organisation(s)
Physics of Functional Materials
External organisation(s)
Nankai University
Journal
Materials - Open Access Journal
Volume
12
No. of pages
8
ISSN
1996-1944
DOI
https://doi.org/10.3390/ma12050819
Publication date
03-2019
Peer reviewed
Yes
Austrian Fields of Science 2012
Laser physics, Materials physics
Keywords
Portal url
https://ucris.univie.ac.at/portal/en/publications/ptype-lithium-niobate-thin-films-fabricated-by-nitrogendoping(385f0a1d-bd4e-4bd9-93f3-aa50e4e546c1).html