Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy

Authors/others:Süss, Dieter; Vogler, Christoph; Bruckner, Florian; Sepehri-Amin, Hossein (National Institute for Materials Science); Abert, Claas
Language:English
Number of pages:5
Date of publication:2017
Journal title:Applied Physics Letters
Volume:110
Number:25
Peer reviewed:true
Links:
Digital Object Identifier (DOI):http://dx.doi.org/10.1063/1.4987140
Publication Type:Article
Portal:https://ucris.univie.ac.at/portal/en/publications/significant-reduction-of-critical-currents-in-mram-designs-using-dual-free-layer-with-perpendicular-and-inplane-anisotropy(0e0651a7-8989-415e-b496-b1555de3fe26).html